IXYS IXFH26N50P N-channel MOSFET Transistor & Diode, 26 A, 500 V, 3-pin TO-247
- RS Stock No.:
- 194-530
- Mfr. Part No.:
- IXFH26N50P
- Manufacturer:
- IXYS
Subtotal (1 unit)*
TWD165.00
(exc. GST)
TWD173.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Plus 1,127 unit(s) shipping from May 11, 2026
Units | Per unit |
|---|---|
| 1 - 4 | TWD165.00 |
| 5 - 19 | TWD137.00 |
| 20 - 49 | TWD127.00 |
| 50 - 99 | TWD115.00 |
| 100 + | TWD110.00 |
*price indicative
- RS Stock No.:
- 194-530
- Mfr. Part No.:
- IXFH26N50P
- Manufacturer:
- IXYS
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 26 A | |
| Maximum Drain Source Voltage | 500 V | |
| Maximum Drain Source Resistance | 230 mΩ | |
| Maximum Gate Threshold Voltage | 5.5V | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Channel Mode | Enhancement | |
| Category | Power MOSFET | |
| Maximum Power Dissipation | 400 W | |
| Typical Turn-Off Delay Time | 58 ns | |
| Maximum Operating Temperature | +150 °C | |
| Series | HiperFET, Polar | |
| Height | 21.46mm | |
| Dimensions | 16.26 x 5.3 x 21.46mm | |
| Length | 16.26mm | |
| Width | 5.3mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Turn-On Delay Time | 20 ns | |
| Minimum Operating Temperature | -55 °C | |
| Typical Input Capacitance @ Vds | 3600 pF@ 25 V | |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 26 A | ||
Maximum Drain Source Voltage 500 V | ||
Maximum Drain Source Resistance 230 mΩ | ||
Maximum Gate Threshold Voltage 5.5V | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Channel Mode Enhancement | ||
Category Power MOSFET | ||
Maximum Power Dissipation 400 W | ||
Typical Turn-Off Delay Time 58 ns | ||
Maximum Operating Temperature +150 °C | ||
Series HiperFET, Polar | ||
Height 21.46mm | ||
Dimensions 16.26 x 5.3 x 21.46mm | ||
Length 16.26mm | ||
Width 5.3mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Turn-On Delay Time 20 ns | ||
Minimum Operating Temperature -55 °C | ||
Typical Input Capacitance @ Vds 3600 pF@ 25 V | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
